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(R)
STGB10N60L
N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT
TYPE STGB10N60L
s
V CES 600 V
V CE(sat ) < 1.95 V
IC 10 A
s s
s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) LOW THRESHOLD VOLTAGE (LOGIC LEVEL INPUT) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
3 1
D2PAK TO-263
APPLICATIONS s ELECTRONIC IGNITION s LIGHT DIMMER s STATIC RELAYS
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V CES V ECR V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature
o o o
Value 600 25 15 25 20 100 125 0.83 -65 to 175 175
Un it V V V A A A W W /o C
o o
C C
(*) Pulse width limited by safe operating area
June 1999
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STGB10N60L
THERMAL DATA
R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.2 62.5 0.1
o o
C/W C/W o C/W
ELECTRICAL CHARACTERISTICS (Tj = - 40 to 150 oC unless otherwise specified) OFF
Symbo l V BR(c es) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 A V GE = 0 T j = 25 oC o T j = 125 C V CE = 0 Min. 600 25 100 100 Typ. Max. Unit V A A nA
V CE = Max Rating V CE = Max Rating V GE = 15 V
ON ()
Symbo l V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage Collector Current V CE = V GE V CE = V GE V GE = 4.5 V V GE = 4.5 V V GE = 4.5 V V GE = 4.5 V Test Con ditions IC = 250 A I C = 250 A T j = 25 oC IC = 8 A T j = - 40 oC IC = 9.5 A Tj = 25 o C IC = 8 A T j = 150 o C V CE = 7 V 15 Min. 0.6 1.0 1.5 1.4 1.25 45 Typ. Max. 2.4 2.0 2.0 Unit V V V V V A
IC
DYNAMIC
Symbo l gf s C i es C o es C res QG Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge Test Con ditions V CE =25 V V CE = 25 V IC = 8 A f = 1 MHz Tj = 25 C
o
Min. 7
Typ. 12 1800 120 19 30
Max.
Unit S
V GE = 0
2600 165 26
pF pF pF nC
V CE = 400 V
IC = 8 A
V GE = 5 V
FUNCTIONAL CHARACTERISTICS
Symbo l I CL E CF E AR Parameter Latching Current Forward Clamping Energy Reverse Avalanche Energy Test Con ditions V clamp = 480 V T j = 125 o C dV/dt = 200 V/s Min. 20 210 10 Typ. Max. Unit A mJ mJ
T start = 55 o C V cl amp = 480 V I C = 10 A L = 4.2 mH - Single Pulse
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STGB10N60L
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Con ditions V CC = 480 V V GE = 5 V V CC = 480 V R G = 1 K T j = 125 o C IC = 8 A R G = 1 K IC = 8 A V GE = 5 V Min. Typ. 0.7 1.9 5 2.5 Max. Unit s s A/s mJ
SWITCHING OFF
Symbo l tc t r (v off ) tf E o ff(**) tc t r (v off ) tf E o ff(**) Parameter Test Con ditions IC = 8 A V GE = 5 V Min. Typ. 4 2.5 1.5 9.0 6 3.3 2.5 10.8 Max. Unit s s s mJ s s s mJ
Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 1 K Fall T ime T j = 25 o C Turn-off Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 1 K Fall T ime T j = 125 o C Turn-off Switching Loss
IC = 8 A V GE = 5 V
(*) Pulse width limited by safe operating area () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)
Safe Operating Area
Thermal Impedance
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STGB10N60L
Output Characteristics Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Capacitance Variations
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STGB10N60L
Gate Charge vs Gate-Emitter Voltage Latching Current vs Rg
Gate Threshold vs Temperature
Off Losses vs Collector Current
Off Losses vs Gate Resistance
Off Losses vs Temperature
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STGB10N60L
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 2: Switching Times Test Circuit For Resistive Load
Fig. 3: Test Circuit For Inductive Load Switching
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STGB10N60L
TO-263 (D2PAK) MECHANICAL DATA
mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068
DIM.
D A C A2 DETAIL "A" A1 B2 B G
C2
DETAIL"A"
E
L2
L
L3
P011P6/E
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STGB10N60L
Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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